unisonic technologies co., ltd uf3n30 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-826.a 3a, 300v n-channel power mosfet ? description the utc uf3n30 is an n-channel enhancement mode power mosfet using utc? s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ? features * r ds(on) <2 ? @ v gs =10v, i d =3a * high switching speed * typically 4nc low gate charge * 100% avalanche tested ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UF3N30L-TM3-R uf3n30g-tm3-r to-251 g d s tape reel uf3n30l-tn3-r uf3n30g- tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
uf3n30 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-826.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 300 v gate-source voltage v gss 20 v continuous i d 3 a continuous drain current pulsed i dm 12 a avalanche energy e as 52 mj power dissipation p d 50 w junction temperature t j +150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 300 v drain-source leakage current i dss v ds =300v 1 a forward v gs =+20v, v ds =0v 100 na gate-source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) i d =250a 2 4 v static drain-source on-state resistance r ds(on) v gs =10v, i d =3a 2 ? dynamic parameters input capacitance c iss 200 pf output capacitance c oss 90 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1mhz 30 pf switching parameters total gate charge q g 4 nc gate to source charge q gs 0.64 nc gate to drain charge q gd v dd =50v, i d =1.3a, i g =100a, v gs =10v 1.6 nc turn-on delay time t d(on) 10 ns rise time t r 50 ns turn-off delay time t d(off) 30 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? , v gs =0~10v 40 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 3 a maximum body-diode pulsed current i sm 12 a drain-source diode forward voltage v sd i s =0.85a 1.3 v
uf3n30 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-826.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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